| PART |
Description |
Maker |
| IRKT132-08 IRKT132-10 IRKT132-16 IRKT132-14 IRKT13 |
THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|130A I(T)
THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|130A I(T)
THYRISTOR MODULE|SCR DOUBLER|1.6KV V(RRM)|130A I(T)
THYRISTOR MODULE|SCR DOUBLER|1.4KV V(RRM)|130A I(T)
THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|130A I(T)
THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|130A I(T)
THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|130A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|1KV V(RRM)|210A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1KV V(RRM)|210A I(T)
THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|210A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|400V V(RRM)|210A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|210A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|600V V(RRM)|210A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.2KV V(RRM)|210A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.6KV V(RRM)|210A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.4KV V(RRM)|210A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|800V V(RRM)|130A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 800V的五（无线资源管理）| 130A条疙（T
THYRISTOR MODULE|SCR DOUBLER|1.6KV V(RRM)|210A I(T) 晶闸管模块|可控硅倍增| 1.6KV五（无线资源管理）| 210A我（翻译
THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|210A I(T) 晶闸管模块|可控硅倍增器| 800V的五（无线资源管理）| 210A我（翻译
THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|210A I(T) 晶闸管模块|可控硅倍增| 1.2KV五（无线资源管理）| 210A我（翻译
THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|210A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|1KV V(RRM)|130A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|130A I(T)
|
KEMET Corporation
|
| MIMMD130S180DK |
1800V 130A Rectifier Diode Module RoHS Compliant
|
Micross Components
|
| MIMMD130S180B |
1800V 130A Rectifier Diode Module RoHS Compliant
|
Micross Components
|
| IRF1407 |
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
|
International Rectifier
|
| APT30M19JV APT30M19JVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 300V 130A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT30M19JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 300V 130A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 831-002 |
GT Gas Tube Assemblies for MIL-DTL-38999 Series II, Glenair Series 79 and Series 80
|
Glenair, Inc.
|
| TVR10561 TVR20101 TVR14431 TVR20180 TVR20181 TVR20 |
From old datasheet system
(TVR Series) ZINC OXIDE VARISTOR 50 SERIES
Shrink Tubing; Shrink Ratio:2:1; Material:Polyolefin RoHS Compliant: Yes
R- 600 PRV 6A
ZINC OXIDE VARISTOR 50 SERIES 氧化锌压敏电50系列
ZINC OXIDE VARISTOR 50 SERIES 氧化锌压敏电0系列
|
N.A.
ETC[ETC]
Electronic Theatre Controls, Inc.
STMicroelectronics N.V.
|
| BAS70 BAS4 BAS40 BAS70-05 BSA40 BAS70-04 BAS70-06 |
RESISTOR,SMD1206,160K,1/4W,5%
Schottky Rectifier
SCHOTTKY arraySERIES 0.2 A, 70 V, SILICON, SIGNAL DIODE
SCHOTTKY array⑩ SERIES
SCHOTTKY ARRAY⒙ SERIES
SCHOTTKY array SERIES
SCHOTTKY array?/a> SERIES
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:50VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:16000uF RoHS Compliant: Yes
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 50 A rms nominal, ±150 A range
SCHOTTKYarray SERIES 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SILICON, MIXER DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-LAWRENCE
|
| 5LP02M |
PicoMOSFET Series
Ultrahigh-Speed Switching Applications
Pico MOSFET Series
|
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
|
