PART |
Description |
Maker |
2SK2604 |
N CHANNEL MOS TYPE (HGIH SPEED/ HIGH VOLTAGE SWITCHIN/ SWITCHING REGULATOR APPLICATIONS) N CHANNEL MOS TYPE (HGIH SPEED, HIGH VOLTAGE SWITCHIN, SWITCHING REGULATOR APPLICATIONS)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MT5355-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State GESS[GE Solid State] ETC
|
BUX11 |
HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR
|
Comset Semiconductor
|
BUX33B BUX33A |
HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS
|
Semelab
|
2N6033 |
HIGH-CURRENT, HIGH-SPEED, HIGH-POWER TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
BUX1212 |
HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR
|
Comset Semiconductor
|
ATA6821 ATA6821-TUQ ATA6821-TUS |
Single-channel high-speed gate driver with push-pull output High Speed Power Driver IC
|
ATMEL Corporation Atmel Corp.
|
2N2907ADCSM |
Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型双PNP晶体管(高可靠性、陶瓷表贴封装)) DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|