PART |
Description |
Maker |
K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36 512Kx16 bit Low Power Full CMOS Static RAM 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp. Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IDT71V2576S IDT71V2578S IDT71V2578YS150BG IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PBGA119 IC LOGIC 3253 LOW-VOLTAGE DUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER -40 85C TSSOP-16 96/TUBE 256K X 18 CACHE SRAM, 4.2 ns, PBGA119 RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 5K/REEL-13 128K X 36 CACHE SRAM, 4.2 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出,脉冲计数器,单周期取消 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PBGA119 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PBGA119 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PBGA119 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PQFP100 IC LOGIC 3257 LOW-VOLTAGE 4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER -40 85C QSOP-16 97/TUBE
|
http:// Integrated Device Technology, Inc.
|
K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999) 128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
CY7C1305AV18 CY7C1305AV18-100BZC CY7C1305AV18-133B |
18-Mb Burst of 4 Pipelined SRAM with QDR(TM) Architecture 18-Mb Burst of 4 Pipelined SRAM with QDR⑩ Architecture
|
Cypress Semiconductor
|
IDT71P79804 IDTIDT71P79104250BQI IDTIDT71P79104267 |
18Mb Pipelined DDR垄芒II SIO SRAM Burst of 2 18Mb Pipelined DDR?II SIO SRAM Burst of 2
|
Integrated Device Technology
|
W25P240A W25P240A-6 W25P240A-6A W25P240AF-6 W25P24 |
From old datasheet system 64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM 64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM
|
Winbond Electronics Corp WINBOND[Winbond]
|
A63P0636E-4.2F A63P0636 A63P0636E A63P0636E-2.6 A6 |
1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 100万米6位同步高的Burst计数器和流水线数据输出高速SRAM 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 100万米36位同步高的Burst计数器和流水线数据输出高速SRAM DIODE ZENER SINGLE 500mW 6Vz 20mA-Izt 0.05 5uA-Ir 3.5Vr DO35-GLASS 5K/REEL
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
CY7C1304CV25-100BZC CY7C1304CV25-167BZC CY7C1304CV |
9-Mbit Burst of 4 Pipelined SRAM with QDR(TM)Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR垄芒 Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
IDT71V546S117PFI IDT71V546S117PF IDT71V546S133PF 7 |
3.3V 128K x 36 ZBT Synchronous PipeLined SRAM 128K x 36 3.3V Synchronous SRAM with ZBT Feature Burst Counter and Pipelined Outputs 128K x 36/ 3.3V Synchronous SRAM with ZBT Feature/ Burst Counter and Pipelined Outputs From old datasheet system 128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs
|
IDT[Integrated Device Technology]
|
IDT71V802S133PFI IDT71V802S133BQI IDT71V67602S133P |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM2.5VI / O的脉冲计数器输出流水线,单周期取 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 4.2 ns, PQFP100 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线,单周期取 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 3.8 ns, PQFP100
|
Integrated Device Technology, Inc.
|
CY7C1303BV25-167BZC |
18-Mbit Burst of Two-Pipelined SRAM with QDRArchitecture
|
Cypress
|
IDTIDT71P71604167BQ IDTIDT71P71604200BQ IDTIDT71P7 |
18Mb Pipelined DDR⑩II SRAM Burst of 2
|
Integrated Device Technology
|
|