| PART |
Description |
Maker |
| BS616UV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
| BS62LV2007 |
Asynchronous 2M(256Kx8) bits Static RAM
From old datasheet system
|
BSI
|
| BS616LV8016 BS616LV8016FIP70 BS616LV8016FC BS616LV |
Asynchronous 8M(512Kx16) bits Static RAM
From old datasheet system
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, Inc.
|
| BS616LV1622 BS616LV1622TIP70 BS616LV1622TC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
From old datasheet system
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| BS616LV161 BS616LV1613FC BS616LV1613FC-55 BS616LV1 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit
Asynchronous 16M(1Mx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位）
256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007 |
Asynchronous 4M(512Kx8) bits Static RAM
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel
surface mount silicon Zener diodes
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| EDD2516AKTA-E |
256M bits DDR SDRAM (16M words x16 bits DDR400)
|
Elpida Memory
|
| EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| IS42S32200L |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
List of Unclassifed Man...
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