PART |
Description |
Maker |
GRM21BR72A103KA01B ATC600F220JT250XT ATC600F300JT2 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc Freescale Semiconductor, In... Freescale Semiconductor...
|
MRF13750HS |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
MHW1810 |
LDMOS RF Power Transistors.(LDMOS射频功率 LDMOS射频功率晶体管。(LDMOS的射频功率管
|
Motorola Mobility Holdings, Inc.
|
LET20030C |
RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
LET20015 9336 |
From old datasheet system RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
BLF7G22LS-100P |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|