| PART |
Description |
Maker |
| MRF6S21100H MOTOROLAINC-MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W?CDMA Lateral N?Channel RF Power MOSFET
|
Motorola
|
| MRF5P21180R6 |
2170 MHz, 38 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF5S21130R3 MRF5S21130SR3 |
2170 MHz, 28 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF5S21130HSR3 MRF5S21130HR3 |
2170 MHz, 28 W AVG., 28 V, 2 x W–CDMA, Lateral N–Channel RF Power MOSFET
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
|
Freescale (Motorola)
Freescale Semiconductor, Inc
飞思卡尔半导体(中国)有限公司
|
| BLD6G22L-50 BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors
|
| MAFR-000087-US1C1T |
Single Junction Drop-In Circulator 2110 MHz-2170 MHz
|
M/A-COM Technology Solutions, Inc.
|
| SKY77455 |
Front-End Module for LTE / EUTRAN Band I (Tx 1920-1980 MHz), (Rx 2110-2170 MHz)
|
Skyworks Solutions Inc.
|
| PTF210301 PTF210301A PTF210301E |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 30 W 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTF211301 PTF211301A |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
|
Infineon Technologies AG
|
| PTFA210601E PTFA210601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PA1223 |
2110-2170 MHz. 5 Watt 28v. GaAs Ultra Linear Power Amplifier
|
MACOM[Tyco Electronics]
|
