| PART |
Description |
Maker |
| HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364 |
4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72
4M x 36 Bit EDO DRAM Module with Parity
|
INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HYM324025GS-60 HYM324025GS-50 HYM324025S-60 HYM324 |
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 60 ns, SMA72
4M x 32-Bit EDO-DRAM Module 4米32位江户记忆体模组
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 50 ns, SMA72
4M x 32 Bit EDO DRAM Module
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HYB3164165ATL-60 HYB3164165ATL-50 HYB3164165ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
4M x 16 Bit 8k EDO DRAM
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
| MSC2313258A-XXDS2 MSC2313258A-XXBS2 MSC2313258A |
1048576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 1,048,576字32位DRAM模块：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| UPD4217805G5-60-7JD UPD4217805G5-50-7JD UPD4217805 |
x8 EDO Page Mode DRAM
16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO 16位动态随机存储器2m-word8位，江户
|
NEC TOKIN America Inc.
NEC TOKIN, Corp.
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| MSC23V26457TA-XXBS8 MSC23V26457SA-XXBS8 MSC23V2645 |
2,097,152-Word x 64-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
