| PART |
Description |
Maker |
| LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
| SFH415 SFH415-U SFH416-R |
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters
|
Siemens Semiconductor G...
|
| TSUS5400 TSUS540009 TSUS5401 TSUS5402 |
Infrared Emitting Diode, 950 nm, GaAs
|
Vishay Siliconix
|
| T163VU-SF-F |
Infrared Emitting Diode Chip, 950 nm, GaAs
|
Vishay Siliconix
|
| TSUS4400AS12Z |
TSUS4400 - Infrared Emitting Diode, 950 nm, GaAs
|
Vishay Semiconductors
|
| TSUS4400 TSUS440008 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| CQY36N CQY36N08 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| SFH458012 Q65110A2631 Q65110A2632 SFH4585 |
GaAlAs-IR-Lumineszenzdioden (880 nm) in SMR? Geh?use
|
OSRAM GmbH
|
| STP5N95K3 STU5N95K3 STD5N95K3 STF5N95K3 |
N-channel 950 V, 3 Ohm, 4 A Zener-protected SuperMESH3(TM) Power MOSFET in IPAK package
N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3
|
ST Microelectronics
STMicroelectronics
|
| Q62703-Q1547 Q62703-Q1093 SFH484_5 Q62703-Q1092 SF |
From old datasheet system
GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm 镓铝砷红外光Lumineszenzdioden 880纳米镓铝砷红外辐射器880纳米
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| STP7N95K3 STW7N95K3 |
N-channel 950 V, 1.1 Ohm, 7.2 A, TO-247, Zener-protected SuperMESH3; Power MOSFET
N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
