| PART |
Description |
Maker |
| MG100J6ES50 E002053 |
Silicon N-Channel IGBT for High Power Switching and Motor Control Application(用于大功率转换和电机控制的硅 N沟道绝缘栅双极型晶体 硅N沟道IGBT的大功率开关和电机控制中的应用（用于大功率转换和电机控制的沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Semiconductor
|
| 5JLZ47 |
HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
| KSC5402DT KSC5402D |
High Voltage High Speed Power Switch Application
|
FAIRCHILD[Fairchild Semiconductor]
|
| BF422 |
NPN Silicon Transistor (High voltage application Monitor equipment application)
|
http://
AUK corp
|
| BC818F |
NPN Silicon Transistor (High current application Switching application)
|
AUK[AUK corp]
|
| 2SB688 |
HIGH POWER AMPLIFIER APPLICATION
|
Unisonic Technologies
|
| 2SK349709 |
High Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SJ20007 |
High Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SK153009 2SK1530 |
High-Power Amplifier Application
|
Toshiba Semiconductor
|
