| PART |
Description |
Maker |
| CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
| 2SB1566 A5800383 |
Power Transistor (-50V, -3A) 功率晶体管（- 50V的三号甲
Power Transistor (-50V/ -3A)
From old datasheet system
|
Rohm Co., Ltd.
|
| RA110C RC110C RA113S RC113S RA103S RC103S RA114S R |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|2VAR
|
Amphenol, Corp.
|
| 2SB1184 2SB1243 2SB1243R 2SB1243Q 2SB1184P |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252AA 晶体管|晶体管|进步党| 50V五（巴西）总裁| 3A条一（c）|52AA
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | SIP
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
HIROSE ELECTRIC Co., Ltd.
ROHM
|
| 2SD2395 |
Power Transistor (-50V/ -3A)
Power Transistor (-50V -3A)
For Power Amplification (50V, 3A)
|
ROHM[Rohm]
|
| DDTA114ECA DDTA115ECA DDTA123ECA DDTA124ECA DDTA14 |
CAP .0082UF 50V PPS FILM 1206 5%
PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR 进步党预偏置信号小的SOT - 23表面贴装晶体
CAP .22UF 50V PPS FILM ECH-S
|
DIODES[Diodes Incorporated]
Diodes, Inc.
Diodes Inc.
|
| DTA114YCAHZG |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
Rohm
|
| DTC113ZCAHZGT116 |
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTA114YCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTA113ZCAHZG |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
