| PART |
Description |
Maker |
| CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18 Organization)
From old datasheet system
|
Sony
|
| MCM69R737AZP7 MCM69R737AZP6R MCM69R737AZP5R MCM69R |
From old datasheet system
4M Late Write LVTTL
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| GS8171DW72AC-300 GS8171DW36AC-300 GS8171DW36AC-300 |
18Mb ??x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb B>1x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM
|
GSI Technology
|
| MCM63R918FC3.3R MCM63R918FC3.7R MCM63R836FC3.7R |
512K X 18 LATE-WRITE SRAM, 1.65 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
512K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
256K X 36 LATE-WRITE SRAM, 1.85 ns, PBGA119
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| HM62L36256BP-33 HM62L36256BP-28 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas
|
| MCM63R836A |
8M Late Write HSTL
|
Motorola, Inc
|
| BAS516 |
High Spee d Switching Diode
|
Chendahang Electronics ...
|
| MCM63R736 |
4M Late Write HSTL
From old datasheet system
|
Motorola
|
| GS8171DW72AC-350I GS8171DW72AC-333 GS8171DW72AC-30 |
18Mb ヒ1x1Dp HSTL I/O Double Late Write SigmaRAM
|
GSI[GSI Technology]
|
| MCM63R918 MCM63R836 |
8MBit Synchronous Late Write Fast Static RAM(8M位同步迟写快速静态RAM)
|
Motorola, Inc.
|
| HM64YGB36100-15 |
32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)
|
Renesas Electronics Corporation
|
