PART |
Description |
Maker |
K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns 1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic Samsung semiconductor
|
K4E170811D K4E170812D K4E160811D K4E160812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
WS62256 |
Very Low Power / Voltage CMOS SRAM 32K X 8bit
|
Wing Shing Computer Components
|
K4F170811D K4F170812D K4F160811D K4F160812D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG[Samsung semiconductor]
|
TH58512DC |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
MP8776 MP8785 MP8786AR MP8786AN MP8786AQ MP8786AS |
CMOS 30 MSPS 8Bit High-Speed Low Power Analog-to-Digital Converter with Power Down CMOS 30 MSPS, 8Bit High-Speed, Low Power Analog-to-Digital Converter with Power Down
|
EXAR[Exar Corporation]
|
KM48C512D |
High Speed 512K x 8Bit CMOS Dynamic RAM with with Fast Page Mode(高12K x 8CMOS 动态RAM(带快速页模式))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia鈩?
|
Toshiba Semiconductor
|