| PART |
Description |
Maker |
| ESN26A090IV |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| EGN21A090IV |
High Voltage - High Power GaN-HEMT
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| EGN21A045I EGN21A045IV |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| MGF0843G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| 2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
HIGH VOLTAGE HIGH SPEED SWITCHING
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| BUL72A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| 2SC2616 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
Unknow
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2SC2614 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
Unknow
ETC[ETC]
List of Unclassifed Manufacturers
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| 2SA1871 2SA1871-GA1-AZ |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 进步党三重扩散硅晶体管高速高压开
1 A, 600 V, PNP, Si, POWER TRANSISTOR
High-speed high-voltage switching PNP 3-diffusion trans
|
NEC, Corp.
NXP Semiconductors N.V.
NEC[NEC]
|
