| PART |
Description |
Maker |
| 74ABT541CMTC 74ABT541CMTCX 74ABT541CMSAX 74ABT541C |
Synchronous 4-Bit Binary Counter 16-SSOP 0 to 70
Octal Buffer/Line Driver with 3-STATE Outputs
Synchronous 4-Bit Binary Counter 16-SOIC 0 to 70 ABT SERIES, 8-BIT DRIVER, TRUE OUTPUT, PDIP20
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MC10E01606 MC100E016FN MC100E016FNG MC100E016FNR2 |
5.0 V ECL 8−Bit Synchronous Binary Up Counter 10E SERIES, SYN POSITIVE EDGE TRIGGERED 8-BIT UP BINARY COUNTER, PQCC28
5.0 VECL 8.Bit Synchronous Binary Up Counter
5.0 V ECL 8−Bit Synchronous Binary Up Counter
|
ONSEMI[ON Semiconductor]
|
| HCF40161 HCF40161M013TR HCF40161B HCF40161BEY HCF4 |
SYNCHRONOUS PROGRAMMABLE 4-BIT COUNTERS
SYNCHRONOUS PROGRAMMABLE 4-BIT COUNTERS
SYNCHRONOUS PROGRAMMABLE 4-BIT BINARY COUNTER WITH ASYNCHRONOUS CLEAR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| HYS64V8220GU HYS72V8220GU HYS72V4200GU HYSV4200GU |
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3 4米64/72-Bit一银行内存模块3.3 8米64/72-Bit 2银行内存模块
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM
4-BANK x 2097152-WORD x 8-BIT
4-BANK x 1048576-WORD x 16-BIT
4-BANK x 4194304-WORD x 4-BIT
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| K7A203600 K7A203600A K7A203600B-QCI14 |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999)
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MH32S64APHB-8 MH32S64APHB-7 MH32S64APHB-6 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM 2147483648位（33554432 -文字4位）同步DRAM
2 /147 /483 /648-BIT (33 /554 /432 - WORD BY 64-BIT)Synchronous DRAM
|
Mitsubishi Electric, Corp.
|
| MH32S64APHB-8 MH32S64APHB-6 MH32S64APHB-7 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP |
From old datasheet system
4-BANK x 2097152-WORD x 8-BIT
64M bit Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S72PHB-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH64S72QJA-7 MH64S72QJA-8 |
4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH16S72AVJB-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
