PART |
Description |
Maker |
2SC2411KT146R |
Medium Power Transistor (32V, 0.5A)
|
Rohm
|
2SB113209 2SB1132 2SA1515S 2SB1237 2SB1132T100P |
Medium Power Transistor (-32V, -1A) Medium Power Transistor (-32V,?1A)
|
Rohm
|
2SB1237 2SA1515S 2SA1515S10 |
Medium Power Transistor (-32V,-1A)
|
Rohm
|
2SB1240 2SB1182 |
Medium power transistor (-32V, -2A)
|
Rohm
|
2SA1577 |
Medium Power Transistor (-32V, -05A)
|
Rohm
|
2SB1237 2SA1515S 2SB1132 2SB1132_1 |
Medium Power Transistor (−32V,−1A)
|
ROHM[Rohm]
|
2SB1132 2SB1132L-X-TN3-T 2SB1132L-P-AB3-R 2SB1132L |
MEDIUM POWER TRANSISTOR 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252 MEDIUM POWER TRANSISTOR 中功率晶体管
|
??『绉???′唤?????? UNISONIC TECHNOLOGIES CO LTD Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
T1G4003532-FS-15 |
35W, 32V, DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO 25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B 25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238 PNP PLASTIC POWER TRANSISTORS Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes
|
Continental Device India Limited
|
CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
ACY11 ACY14 ACY17 ACY18 ACY19 AC117 AC130 AC126 AC |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-1 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 1A I(C) | TO-1 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1.2A I(C) | TO-1 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | CAN TRANSISTOR | BJT | NPN | 15V V(BR)CEO | CAN TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | TO-1 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | CAN TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 15V的五(巴西)总裁| 500mA的一(c)| TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 200MA I(C) 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 200mA的我(丙
|
Electronic Theatre Controls, Inc. IDEC, Corp.
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