PART |
Description |
Maker |
AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
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ALLIANCE MEMORY INC ALSC[Alliance Semiconductor Corporation] ETC[ETC] Alliance Semiconductor, Corp.
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AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time 5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32 High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85 Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125 Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85 Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85 5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time 5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
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Alliance Semiconductor ... Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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GVT72128A8 72128A8S |
REVOLUTIONARY PINOUT 128K X 8 From old datasheet system
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Galvantech
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GVT73128A8 73128A8S |
REVOLUTIONARY PINOUT 128K X 8 From old datasheet system
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Galvantech
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AS5LC1008DJ-20_XT AS5LC1008 AS5LC1008DCJ-10_IT AS5 |
128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
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AUSTIN[Austin Semiconductor]
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IDT71V124SA IDT71V124SA10 IDT71V124SA10PH IDT71V12 |
3.3V128K x 8 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout 240 x 320 pixel format (portrait mode), Compact LCD size AC 5C 5#16S PIN RECP BOX AC 3C 3#16S SKT RECP BOX 128K X 8 STANDARD SRAM, 10 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 128K X 8 STANDARD SRAM, 12 ns, PDSO32 0.300 INCH, PLASTIC, SOJ-32
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IDT[Integrated Device Technology] Integrated Device Technology, Inc. Bourns, Inc.
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K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存(5V工作),旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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IDT71V124SA IDT71V124SA12PHI IDT71V124SA15PHI |
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout
|
Integrated Device Techn...
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IDT71V124SA 71V124SA_DS_30147 |
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power &Ground Pinout From old datasheet system
|
IDT
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IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM 128K X 32 CACHE SRAM, 8.5 ns, PQFP100
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INTEGRATED SILICON SOLUTION INC
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