| PART |
Description |
Maker |
| MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Motorola, Inc
|
| CW1XCT52A0.015OHMJ CW1XCT52A0.024OHMJ CW1XCT52A0.0 |
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.015 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.024 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.027 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.016 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.036 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.011 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.012 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.018 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.039 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.043 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.013 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 3 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 3 W, 1 %, 50 ppm, 0.604 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
|
KOA Speer Electronics,Inc.
|
| SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
| IRFF430 FN1894 |
2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET 2.75 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2.75A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET
From old datasheet system
|
Intersil, Corp.
Intersil Corporation
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| STW29NK50Z |
31 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
N-CHANNEL 500 V - 0.105ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET
N-CHANNEL 500 V - 0.105 Ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| PPF440M |
N Channel MOSFET; Package: TO-254; ID (A): 5; RDS(on) (Ohms): 0.85; PD (W): 125; BVDSS (V): 500; Rq: 1; 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| RF1S4N100SM RFP4N100 FN2457 |
4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| IRF450 |
13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
MICROSEMI CORP-LAWRENCE
|
|
