| PART |
Description |
Maker |
| SY58021U10 SY58021UMG SY58021UMGTR SY58021UMI SY58 |
4GHz, 1:4 LVPECL Fanout Buffer/Translator with Internal Termination Precision Edge
|
Micrel Semiconductor
|
| SC1532 SC1532CS |
RES 6.19K OHM 1/10W .1% 0603 SMD
400mA SmartLDOTM with Internal Pass MOSFET
|
SEMTECH[Semtech Corporation]
|
| MGFC38V5964_97 MGFC38V5964 MGFC38V596497 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TQP2420G |
2.4GHz ISM Band InGaP HBT Power Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| MGFC47V5864 |
5.8-6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5964A |
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RF5745PCK-410 |
2.4GHz TO 2.5GHz, 802.11b/g/n SINGLE-BAND FRONT END MODULE
|
RF Micro Devices
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V6472A |
6.4-7.2 GHz BAND 10W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V5258 |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET 5.2 - 5.8GHz频段0W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC40V7785B C407785B |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V6472A C406472A |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
From old datasheet system
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
