| PART |
Description |
Maker |
| 2SC4213 E000917 |
FOR MUTING AND SWITCHING APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)
|
Toshiba Corporation
|
| HN1C03FUTE85R |
For Muting And Switching Applications
|
Toshiba Semiconductor
|
| 2SC5376 EE08405 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER/ FOR MUTING AND SWITCHING APPLICATIONS)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, FOR MUTING AND SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| L2SA2030M3T5G11 |
Low frequency transistor For switching, for muting.
|
Leshan Radio Company
|
| 2SA1954 2SA195407 |
General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
| 2SA1953 2SA195307 |
General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
| 2SC3326 E000830 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC332607 2SC3326 |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
Toshiba Semiconductor
|
| HN1C03FU |
Transistor Silicon Npn Epitaxial Type (PCT Process) For Muting and Switching Applications
|
TOSHIBA
|
| 2SC4213 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
TOSHIBA
|
| HN1C03FU E001973 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1304 RN1306 RN1302 RN1303 RN1305 RN1301 RN1303TE |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications
Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
