| PART |
Description |
Maker |
| DHM020BB DHM040BB |
HIGH SENSITIVITY ZERO-BIAS SCHOTTKY DIODE DETECTORS
|
HEROTEK
|
| BAS125-04 BAS125-05 BAS125-06 Q62702-D1316 BAS125 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) 2 ELEMENT, SILICON, SIGNAL DIODE
Circular Connector; Series:MS3106R; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MASW-002102-13580 MASW-002102-13580G MASW-003102-1 |
2000 MHz - 18000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.8 dB INSERTION LOSS
HMIC Silicon PIN Diode Switches with Integrated Bias Network
HMIC?/a> Silicon PIN Diode Switches with Integrated Bias Network
HMIC垄芒 Silicon PIN Diode Switches with Integrated Bias Network
|
M/A-COM Technology Solutions, Inc.
|
| BAS52 BAS52-02V |
Silicon Schottky Diode
Schottky Diodes - Low current rectification and high speed switching Schottky diode
|
Infineon Technologies A...
Infineon Technologies AG
|
| BAT54AW BAT54AWPBF |
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SCHOTTKY DIODE 0.2 Amp
30V 0.2A Schottky Common Anode Diode in a SOT-323 package
|
International Rectifier
|
| NSR0530P2T5G |
Schottky Barrier Diode
30V 0.5A low VF SOD-923 Schottky Diode 0.5 A, 30 V, SILICON, SIGNAL DIODE
|
Rectron Semiconductor
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| MA4SW310B-1 MA4SW210B-1 |
HMIC Silicon PIN Diode Switches with Integrated Bias Network
HMIC垄芒 Silicon PIN Diode Switches with Integrated Bias Network
|
M/A-COM Technology Solutions, Inc.
|
| NTLJF3118N NTLJF3118NTAG NTLJF3118NTBG |
Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
|
ON Semiconductor
|
