PART |
Description |
Maker |
M54585KP |
Transistor Array 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
M63826FP M63826GP M63826P M63826P/FP/GP |
Transistor Array 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
HIP0061 HIP0061AS1 HIP0061AS2 |
60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array 60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array 60V 3.5A 3-Transistor Common Source ESD Protected Power MOSFET Array
|
INTERSIL[Intersil Corporation]
|
MRF9002NR2 |
RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管阵列N沟道增强型MOSFET的侧
|
飞思卡尔半导体(中国)有限公司
|
MRF9002R2 |
MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET RF Power Field Effect Transistor Array
|
Motorola, Inc
|
ALD1116DA ALD1106SB ALD1106DB ALD1106 ALD1106PB AL |
QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:22-35 RoHS Compliant: No TRANS NPN 40VCEO 10A TO-220F 双N沟道MOSFET的阵列匹 QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY 双N沟道MOSFET的阵列匹
|
ALD[Advanced Linear Devices] Advanced Linear Devices, Inc.
|
FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 20A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 3A条(丁)| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
NSF20504 NSF205023 NSF20607 NSFM150 NSFM250 NSFM35 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 7A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-254 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 15A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 24A I(D) | TO-254 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 24A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-254 晶体管| MOSFET的| N沟道| 100V的五(巴西)直|5A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-254 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 9A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-254 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 24A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-254
|
Sharma Electro Components, Inc.
|
UPA1552H |
MOS FIELD EFFECT POWER TRANSISTOR ARRAY (FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY)
|
NEC
|
IRF637 IRFP256 IRFP257 IRFP242R IRF230R IRFP240R I |
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 6.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 23A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 21A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 400MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 18A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 8A条(丁)|04AA TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 8A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 5A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 33A I(D) | TO-247 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|3A条(丁)|47 TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 22A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 275V五(巴西)直| 22A条(丁)|04AA
|
ECM Electronics, Ltd. Fairchild Semiconductor, Corp.
|
NTE904 |
Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)
|
NTE[NTE Electronics]
|
CA3096AE CA3096CE |
TRANSISTOR,BJT,ARRAY,INDEPENDENT,40V V(BR)CEO,50MA I(C),DIP TRANSISTOR,BJT,ARRAY,INDEPENDENT,24V V(BR)CEO,50MA I(C),DIP From old datasheet system
|
Intersil Corp
|