| PART |
Description |
Maker |
| IRFW520A IRFI520A IRFWI520A IRFW520ATM |
Advanced Power MOSFET
N-CHANNEL POWER MOSFET
100V N-Channel A-FET
Advanced Power MOSFET 9.2 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFR120A IRFU120A IRFR120ATF IRFR120ATM IRFU120ATU |
Advanced Power MOSFET
Avalanche Rugged Technology
N-CHANNEL POWER MOSFET
100V N-Channel A-FET / Substitute of IRFU110
100V N-Channel A-FET / Substitute of IRFR120
(IRFR120A / IRFU120A) Advanced Power MOSFET
|
Fairchild Semiconductor
|
| IRL3102 IRL3102L |
Advanced Process Technology
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)
|
IRF[International Rectifier]
|
| IRF2204PBF IRF2204PBF-15 |
75 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
HEXFET? Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| IRF1010NLPBF IRF1010NSPBF IRF1010NSTRRPBF IRF1010N |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| IRFI1010NPBF IRFI1010NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFI1310NPBF IRFI1310NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRLM210 IRLM210A IRLM210ATF |
200V N-Channel Logic Level A-FET
N-CHANNEL MOSFET
Advanced Power MOSFET
HEXFET Power MOSFET
|
Fairchild Semiconductor
International Rectifier
|
| SFS9630 IRFS9630 |
Advanced Power MOSFET 4.4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS150A |
TRANSISTOR|MOSFET|N-CHANNEL|100VV(BR)DSS|31AI(D)|TO-247VAR
Advanced Power MOSFET
|
Fairchild Semiconductor
|
| IRL630A IRL630ANL |
200V N-Channel Logic Level A-FET / Substitute of IRL630 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFL024 IRFL024N IRFL024NTRPBF IRFL024NTR |
Surface Mount
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V Rds(on)=0.075ohm Id=2.8A)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)
Advanced Process Technology
|
IRF[International Rectifier]
|
