| PART |
Description |
Maker |
| MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| HE8404SG_06 HE8404SG06 |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| HE8812SG |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| OPE5594S |
The OPE5594S is GaAlAs infrared emitting diode
|
Roithner LaserTechnik G...
|
| MIE-324L3 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| LNA4401L |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| TSHA550009 |
Infrared Emitting Diode, 875 nm, GaAlAs
|
Vishay Siliconix
|
| LTE-2871 |
GaAlAs T-1 3/4 Modified Infrared Emitting Diode
|
LITE-ON ELECTRONICS INC
光宝科技股份有限公司
Lite-On Technology Corporation
|
| MIE-824H2 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| LN189S |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| LN671 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
