| PART |
Description |
Maker |
| KTK5162S KTK5162 |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS201 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
Toshiba Semiconductor
|
| 1SS368 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
Toshiba Semiconductor
|
| 1SS300 |
DIODE (ULTRA HIGH SPEED SWTHCING PPLICATION)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 1SS387 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS382 |
DIODE (ULTRA HIGH SPEED SWITCHING APLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS352 |
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS362 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| NTE593 |
Silicon Diode, High Speed Switch
|
NTE[NTE Electronics]
|
| KDS190 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| KDS226 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| KDS121 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC Holdings
KEC(Korea Electronics)
|
