| PART |
Description |
Maker |
| MF1157V-2 |
FOR E-GSM MOBILE TELEPHONE, Tx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MF1173V-1 |
FOR GSM MOBILE TELEPHONE, Tx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MF1009S-1 |
From old datasheet system
FOR AMPS MOBILE TELEPHONE, Rx
FOR AMPS MOBILE TELEPHONE / Rx
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MF1118V-2 |
From old datasheet system
FOR DIGITAL MOBILE TELEPHONE, Tx
FOR DIGITAL MOBILE TELEPHONE / Tx
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MB3891 MB3891PFV |
Power Management IC for GSM Mobile Phone
|
Fujitsu Limited
Fujitsu Component Limited.
|
| CGY59 Q68000-A8887 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN DECT GSM in 2.7V to 6V systems)
From old datasheet system
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MF1050V-2 |
FOR DIGITAL MOBILE TELEPHONE, Rx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MF1083V-2 |
FOR DCS MOBILE TELEPHONE, Rx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF0121 |
MOS FET Power Amplifier Module for GSM Mobile Phone
|
Hitachi Semiconductor
|
| VC-2R5A50-0991 VC-2R5A50-1035 VC-3R0A50-1750 VC-3R |
VCO (230 to 2300 MHz)
ASSP for Mobile Telephone
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
