| PART |
Description |
Maker |
| 27L2000-15 27L2000-25 27L2000-12 27L2000-20 27L200 |
2M-BIT [256Kx8] CMOS EPROM
|
Macronix International Co., Ltd.
|
| MX27L2000TI-25 27L2000-12 27L2000-15 27L2000-20 27 |
2M-BIT [256Kx8] CMOS EPROM
|
MCNIX[Macronix International]
|
| N02L83W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx8 bit
|
ON Semiconductor
|
| BS62LV2006TI BS62LV2006TIG55 BS62LV2006TIG70 BS62L |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
Asynchronous 2M(256Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
ETC
BSI[Brilliance Semiconductor]
|
| BS62LV2008 BS62LV2016SI BS62LV2008DC BS62LV2008DC- |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
From old datasheet system
Asynchronous 2M(256Kx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| DSK6F2008U2E K6F2008U2E-YF55 K6F2008U2E-YF70 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
|
| K6F2008V2E K6F2008V2E-YF70 K6F2008V2E-LF55 K6F2008 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM68S2000 |
256Kx8 Bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LE25U20AMB-AH |
2M-bit (256Kx8)Serial Flash Memory
|
ON Semiconductor
|
| W925C240 |
8-BIT MCU w/256Kx8 ROM, 8Kx8 RAM, 40 I/Os, CID Type I & II
|
Winbond Electronics
|
