| PART |
Description |
Maker |
| STH6NA80FI 2998 STW6NA80 |
N-CHANNEL MOSFET
N - CHANNEL 800V - 1.8 - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| SI7390DP SI7390DP-T1-E3 |
9 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel 30-V (D-S) Fast Switching WFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| STW7NA80 STH7NA80FI STH7NA80 STW7NA80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
N-CHANNEL MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
|
| STP6NA80FI STP6NA80 3071 |
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET) N沟道增强模式快速功率MOS晶体管（不适用沟道增强模式快速功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| SI9801DY |
N/P-Channel 20-V (D-S) Pair
N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge
N-/P-Channel/ Reduced Qg/ Fast Switching Half-Bridge
|
VISAY[Vishay Siliconix]
|
| STGB6NC60HDT4 STGP6NC60HD STGB6NC60HD-1 STGB6NC60H |
N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH IGBT
N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH垄芒 IGBT
N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH⑩ IGBT
|
STMicroelectronics
|
| STGY40NC60VD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT
N-channel 600V - 50A - Max247 Very fast PowerMESH⑩ IGBT
|
STMicroelectronics
|
| STGP10NC60H P10NC60H |
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH IGBT
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| SI7840DP SI7840DP-E3 |
11 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
