| PART |
Description |
Maker |
| VG3617161BT |
x16 CMOS SDRAM
From old datasheet system
|
VSI
|
| K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| UPD45128441G5-A10BL9JF UPD45128841G5-A10BL9JF UPD4 |
x8 SDRAM
x16 SDRAM
x4 SDRAM x4内存
|
Elpida Memory, Inc.
|
| HYB18TC256160AF-3.7 HYB18TC256160AF-5 HYB18TC25616 |
256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM
|
Qimonda AG
|
| MT40A512M16JY-075EAIT MT40A512M16JY-083E |
8Gb: x4, x8, x16 DDR4 SDRAM
Automotive DDR4 SDRAM
|
Micron Technology
|
| HYS72V32301GR-8 HYS72V64300GR-8 HYS72V128320GR-8 H |
1GB PC100 (2-2-2) 2-bank End-of-Life
SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC 内存| 64MX72 |的CMOS |内存| 168线|塑料
SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
|
Infineon Technologies AG
|
| MT48LC16M16A2TG-75ITD |
256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| HY62UF16806B-DFC HY62UF16806B-DFI HY62UF16806B-C H |
x16|3V|55/70/85|Super Low Power Slow SRAM - 8M x16 | 3V的| 55/70/85 |超级低功耗SRAM的速度 800
512Kx16bit full CMOS SRAM
|
GE Security, Inc.
Hynix Semiconductor
|
| IS43DR86400B |
512Mb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| IS43DR81280B |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
