| PART |
Description |
Maker |
| RDN050N20 |
Switching (200V, 5A) 开关（00VA）条
Switching (200V/ 5A)
|
Rohm Co., Ltd.
ROHM[Rohm]
ETC
|
| 2SK2459N A5800290 |
From old datasheet system
Switching (200V, 5A)
|
ROHM[Rohm]
|
| SCS21DSTL |
0.2A , 200V Plastic-Encapsulated Switching Diode
|
SeCoS Halbleitertechnologie GmbH
|
| BYV26AGP BYV26BGP BYV26CGP BYV26DGP BYV26EGP |
Super Fast Recovery Pack: DO-41
Ultra Fast Recovery Pack: DO-41
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE拢潞 200V to 1000V CURRENT: 1.0A
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE 200V to 1000V CURRENT: 1.0A
|
Gulf Semiconductor
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| OM6035NM |
200V, N-Channel, 30Amp MOSFET(200V ,30A, N沟道，MOS场效应管) 00V，N沟道30Amp MOSFET的（00V0A条，沟道来说，MOS场效应管
|
Omnirel
International Rectifier, Corp.
|
| FS10KM-10A |
Power MOSFETs: FL Series
HIGH-SPEED SWITCHING USE
CAP 470PF 200V 1% NP0(C0G) AXIAL RAD.20 BULK R-MIL-PRF-20 STANDOFF
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CDSW20-G CDSW21-G CDSW19-G |
Small Signal Switching Diodes, V-RRM=150V, V-R=150V, P-D=250mW, I-F=200mA
Small Signal Switching Diodes, V-RRM=200V, V-R=200V, P-D=250mW, I-F=200mA
Small Signal Switching Diodes, V-RRM=100V, V-R=100V, P-D=250mW, I-F=200mA
|
Comchip Technology
|
| IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
| IRFU210B IRFR210B IRFU210BTLTUFP001 IRFU210BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR210 & IRFR210A
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFU210 & IRFU210A
|
FAIRCHILD[Fairchild Semiconductor]
|
| MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060M |
RF Power Field Effect Transistors
CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014
CAP CER .10UF 100V 20% AXIAL
|
Freescale (Motorola)
飞思卡尔半导体(中国)有限公司
|
