| PART |
Description |
Maker |
| 2SK1310A EA09774 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
From old datasheet system
RF POWER MOS FET for UHF TV ROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
| NE5511279A-T1A-A NE5511279A NE5511279A-T1-A |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
CEL[California Eastern Labs]
|
| 2SK2596BXTL-E 2SK259607 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
| PF0342A PF0345A PF0341A PF0343A PF0344A |
MOS FET POWER AMPLIFIER MODULE FOR UHF BAND
|
HITACHI[Hitachi Semiconductor]
|
| 2SK2922 |
Silicon N Channel MOS FET UHF Power Amplifier
|
Hitachi Semiconductor
|
| 2SK2975 SK2975 |
From old datasheet system
RF POWER MOS FET(VHF/UHF power amplifiers)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BB504C |
Bias Controlled Monolithic IC UHF RF Amplifier
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SK2095N A5800286 |
Transistors > MOS FET > Power MOS FET
Small switching (60V, 10A)
From old datasheet system
|
ROHM[Rohm]
|
| 2SK2504 A5800294 |
Transistors > MOS FET > Power MOS FET
Small switching (100V, 5A)
From old datasheet system
|
ROHM[Rohm]
|
| BB503CCS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB502C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
