| PART |
Description |
Maker |
| 2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| M68732SHA 68732SHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 470-520 MHz 6.7W FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 470-520MHz, 6.7W, FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 470-520MHZ 6.7W FM PORTABLE
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SK2981 2SK2981-Z 2SK2981-E1 2SK2981-T1 2SK2981-T2 |
Power MOSFET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
NEC Corp.
|
| M68732EH 68732EH M68732 |
SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 520-530MHz / 6.5W / FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SK410 |
RF POWER, FET
From old datasheet system
Silicon N-Channel MOS FET (HF/VHF power amplifier)
|
Hitachi Semiconductor
|
| UPA2701GR UPA2701GR-E2 UPA2701GR-E1 UPA2701TP-E2 U |
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING N-CHANNEL POWER MOSFET
Nch enhancement-type MOS FET
|
NEC
|
| 2SK3022TENTATIVE |
2SK3022 (Tentative) - N-Channel Power F-MOS FET
Power F-MOS FETs
|
Matsshita / Panasonic
|
| 2SK1028 |
N CHANNEL MOS TYPE (RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
|
Fuji Electric
Toshiba Semiconductor
|
