PART |
Description |
Maker |
MB8502D064AA-70 MB8502D064AA-60 |
CMOS 2M×64 BIT
Hyper Page Mode DRAM Module(CMOS 2M×64 位超级页面存取模式动态RAM模块) CMOS 2M?64 BIT Hyper Page Mode DRAM Module(CMOS 2M?64 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu Limited
|
HYM364020GS-60 HYM364020S-60 Q67100-Q982 HYM364020 |
4M x 36-Bit Dynamic RAM Module 4M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 4M x 36 Bit FPM DRAM Module with Parity
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
HYM322005GS-60 HYM322005GS-50 HYM322005S-60 HYM322 |
2M x 32-Bit Dynamic RAM Module 2M x 32 Bit EDO DRAM Module 2M x 32 Bit DRAM Module 2M x 32-Bit Dynamic RAM Module (Hyper Page Mode - EDO Version) From old datasheet system 2M x 32-Bit Dynamic RAM Module 2M X 32 EDO DRAM MODULE, 50 ns, SMA72
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
HYM536A414A |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
HYM536A410A |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
HYM536810A |
8M x 36-Bit CMOS DRAM Module
|
Hyundai
|
HYM328000GD-60 HYM328000GD- 328000 HYM328000GD-50 |
-8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 8M x 32 Bit DRAM Module (SO-DIMM) From old datasheet system 8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 8M X 32 FAST PAGE DRAM MODULE, 60 ns, ZMA72
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
HYM72V2005GS-60 HYM72V2005GS-50 HYM72V2005GS-50- |
-2M x 72-Bit EDO-DRAM Module 2M x 72-Bit EDO-DRAM Module (ECC - Module) 2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
HYM324025GS-60 HYM324025GS-50 HYM324025S-60 HYM324 |
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 60 ns, SMA72 4M x 32-Bit EDO-DRAM Module 4米32位江户记忆体模组 4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 50 ns, SMA72 4M x 32 Bit EDO DRAM Module
|
INFINEON TECHNOLOGIES AG SIEMENS A G SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|