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NM27LV010 - 1,048,576-Bit (128k x 8) Low Voltage EPROM 1048576-Bit (128k x 8) Low Voltage EPROM

NM27LV010_390042.PDF Datasheet


Part No.	NM27LV010 NM27LV010V250 NM27LV010TE250 NM27LV010VE250 NM27LV010T200 NM27LV010T250 NM27LV010TE200 NM27LV010V200 NM27LV010VE200
Description	1,048,576-Bit (128k x 8) Low Voltage EPROM 1048576-Bit (128k x 8) Low Voltage EPROM
File Size	100.72K / 10 Page
Maker	FAIRCHILD[Fairchild Semiconductor]
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Full text search : 1,048,576-Bit (128k x 8) Low Voltage EPROM 1048576-Bit (128k x 8) Low Voltage EPROM

Related Part Number

PART	Description	Maker
NM27LV010 NM27LV010V250 NM27LV010TE250 NM27LV010VE	1,048,576-Bit (128k x 8) Low Voltage EPROM 1048576-Bit (128k x 8) Low Voltage EPROM	FAIRCHILD[Fairchild Semiconductor]
M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M	128K X 8 STANDARD SRAM, 100 ns, PDSO32 1048576-bit (131072-word by 8-bit) CMOS static SRAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32	Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
M5M5V108DFP-70H M5M5V108DKV-70H M5M5V108DVP-70H M5	1048576-bit (131072-word by 8-bit) CMOS static RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word8位）的CMOS静态RAM	Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
MBM29F200BA12 MBM29F200TA12	2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万（256K × 8/128K × 16）位快闪记忆体（V的电源电56K × 8/128K × 16闪速存储器 2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī	Fujitsu, Ltd. Fujitsu Limited
M5M512R88DJ-10 M5M512R88DJ-12 M5M512R88DJ-15	1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM	Mitsubishi Electric Semiconductor
M5M44258-7	STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM	Mitsubishi Electric Corporation
M5M51R16AWG-10L D99015 M5M51R16AWG-15L M5M51R16AWG	From old datasheet system 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM	MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
M5M51008KR-10LL-I M5M51008KR-70LL M5M51008KR-55LL	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM From old datasheet system	Mitsubishi
UPD442012AGY-DD10X-MJH UPD442012AGY-DD12X-MJH UPD4	2M-bit(128K-word x 16-bit) Low Power SRAM	NEC
K6T1008V2C K6T1008V2C-B K6T1008V2C-D K6T1008V2C-F	128K x8 bit Low Power and Low Voltage CMOS Static RAM	SAMSUNG SEMICONDUCTOR CO. LTD.
MH1V36CAM-7 MH1V36CAM-6 MH1V36CAM	FAST PAGE MODE 37748736-BIT ( 1048576-WORD BY 36-BIT ) DYNAMIC RAM From old datasheet system	Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]

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