| PART |
Description |
Maker |
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFR224B IRFU224B IRFR224BTMFP001 IRFR224BTMNL |
250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A
250V N-Channel MOSFET
|
Fairchild Semiconductor
International Rectifier
|
| IRFW614B IRFI614B IRFI614BTUFP001 IRFW614BTMFP001 |
250V N-Channel B-FET / Substitute of IRFW614A
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRFI614A
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDI33N25 |
250V N-Channel MOSFET 250V N沟道MOSFET
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| FQI2P25 FQB2P25 FQB2P25TM FQI2P25TU |
250V P-Channel QFET
250V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD4P25TM FQD4P25TMWS |
P-Channel QFETMOSFET -250V, -3.1A, 2.1
250V P-Channel MOSFET
|
Fairchild Semiconductor
|
| FQT2P25 FQT2P25TF |
250V P-Channel QFET
250V P-Channel MOSFET
|
Fairchild Semiconductor
|
| IRHG8214 2071 IRHG3214 IRHG4214 IRHG7214 IRHG8214N |
250V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
0.5 A, 250 V, 2.4 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB
250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
250V Quad N-Channel MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE
From old datasheet system
|
IRF[International Rectifier]
http://
|
| IRC644 |
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier
|
