| PART |
Description |
Maker |
| KMM5322204C2W |
2MBx32 DRAM Simm Using 1MBx16
|
Samsung Semiconductor
|
| KMM5362205C2W |
2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
| KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5361203C2W |
1M x 36 DRAM SIMM(1M x 36 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM53216004BK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM5328004BSWG KMM5328004BSW |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53216000BK KMM53216000BKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5321204C2W KMM5321204C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
| KMM53632000BK |
32MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
| KMM53232004CK KMM53232004CKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| CL001E08325B0DJ-60 20084C |
8M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72
|
Fox Electronics
|
| MH8M36AUJ-65 |
8M X 36 FAST PAGE DRAM MODULE, 65 ns, SMA72 SIMM-72
|
Qimonda AG
|
