PART |
Description |
Maker |
S212S01 |
SIP Type SSR for Medium Power Control
|
Sharp Corporation
|
S202S12F |
IT(rms)?A, Built-in snubber circuit Zero Cross type SIP 4pin Triac output SSR
|
Sharp Electrionic Components
|
UPD24TP |
SIP SSR
|
Crydom
|
UPD2415DF-10 UPD2415D-10 |
SIP SSR 2 Relays in one package with independent control input
|
Crydom Inc., http://
|
S216S02 |
Sip Solid State Relay For Medium Power Control
|
SHARP
|
PR31MA11NTZ |
6-PIN DIP TYPE SSR FOR LOW POWER CONTROL
|
SHARP
|
BCR6 BCR6AM |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
BCR16UM |
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE 中功率使用绝缘型,玻璃钝化型
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
|
BCR12 BCR12CM BCR12CM-8L |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE 400 V, 12 A, TRIAC, TO-220
|
Mitsubishi Electric Semiconductor
|
BCR12KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|