PART |
Description |
Maker |
SPB100N08S2-07 SPP100N08S2-07 |
Low Voltage MOSFETs - TO220/263; 100 A; 75V; NL; 7.1 mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IPI06N03LA IPP06N03LA |
OptiMOS®2 - Power packages Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 6.2mOhm, 50A, LL
|
Infineon
|
PPN0500B 542AB0500 915AB0500MBP |
HEATSINK TO220/218 5.0C/W Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits HEATSINK TO220/218 5.8C/W 散热片TO220/218 5.8摄氏
|
KEMET Corporation
|
IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30 SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
HC55120CB HC55130IB |
Voltage Regulator IC; Output Current:2A; Output Voltage:5V; Package/Case:3-TO3P; Output Voltage Max:5.1V; Output Voltage Min:4.9V IC-VLTG REG 6V TO220 ISO
|
Intersil Corporation
|
IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
KMB7D1DP30QA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
KMB4D0N30SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
KMB2D0N60SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|