| PART |
Description |
Maker |
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| HCMS-2902 HCMS-2903 HCMS-2904 HCMS-2911 HCMS-2912 |
HCMS-2962 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2961 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2964 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2963 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2925 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2924 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2923 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2922 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2921 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2915 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2914 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2913 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2912 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2911 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2905 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2904 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2903 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2902 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2901 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2975-HI000 · High Performance CMOS 5 x 7 Alphanumeric Displays
Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
T-PNP-SI-HV AF PWR AMP
High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Vishay Intertechnology, Inc.
|
| HYMP125R72M4-E3/C4 HYMP125R72MP4-E3/C4 HYMP512R724 |
Versatile Miniature Switch, High Performance 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver. 64M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| V53C404 |
High Performance / Low Power 1M x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| V54C3128804VAT8 V54C3128804VAT7 |
HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8
|
Mosel Vitelic, Corp.
|
| MN103SE5 MN103SFE5P |
32-bit High Performance Microcomputers MN103S Series
Transfer mode: Word transfer. Burst transfer. Intermittent transfer
|
Panasonic Semiconductor
|
| GAL16V8D-20QPI GAL16V8D-20QJI GAL16V8D-7LP GAL16V8 |
Aluminum Snap-In Capacitor; Capacitance: 2700uF; Voltage: 160V; Case Size: 30x50 mm; Packaging: Bulk
High Performance E2CMOS PLD Generic Array Logic EE PLD, 25 ns, PQCC20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 3.5 ns, PQCC20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 7.5 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 7.5 ns, PDSO20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 25 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PQCC20
IC,MICROCONTROLLER,8-BIT,68HC08 CPU,CMOS,DIP,8PIN,PLASTIC RoHS Compliant: No
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| 5962-9951901QYA 5962-9951902QYA 5962-9952001QYA 59 |
5V, ISR high-performance CPLDs, 64 macrocells, 125MHz
5V, ISR high-performance CPLDs, 64 macrocells, 154MHz
3.3V, ISR high-performance CPLDs, 64 macrocells, 100MHz
3.3V, ISR high-performance CPLDs, 128 macrocells, 83MHz
3.3V, ISR high-performance CPLDs, 256 macrocells, 66MHz
5V, ISR high-performance CPLDs, 512 macrocells, 100MHz
3.3V, ISR high-performance CPLDs, 512 macrocells, 66MHz
3.3V, ISR high-performance CPLDs, 64 macrocells, 143MHz
|
Cypress
|
| MT4LD164G-7BN MT4LD164G-6BN MT4LD164G-5BN MT4LDT16 |
x64 Burst EDO Page Mode DRAM Module X64的脉冲EDO页面模式内存模块
|
Cypress Semiconductor, Corp.
|
| V53C104F V53C104FP60L V53C104FP70 V53C104FK60 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
http://
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| M4A3-512_256-10FAC M4A5-96/48-10VC M4A5-96/48-10VI |
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 5.5 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 10 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP144
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP48
CONNECTOR ACCESSORY
CAP 1500UF 100V ELECT KMH SNAP
High Performance E 2 CMOS In-System Programmable Logic
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| V54C365804VD |
HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8 高性能143/133/125 MHz3.3米8同步DRAM 4银行X 2Mbit的8
|
Mosel Vitelic, Corp.
|
|
