| PART |
Description |
Maker |
| KMM53616004CK KMM53616004CKG |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53616004CK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
|
Samsung Semiconductor Co., Ltd.
|
| KMM372V1680BS KMM372V1600BK KMM372V1600BS KMM372V1 |
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HSD16M32M4V-F10L HSD16M32M4V-F12 HSD16M32M4V-F13 H |
Synchronous DRAM Module 64Mbyte ( 16M x 32-Bit ) 72-Pin SIMM based on 16Mx8, 4Banks, 4K Ref., 3.3V
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
| KMM372C1600BK KMM372C1600BS KMM372C1680BK KMM372C1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
|
Samsung Electronic
Samsung semiconductor
|
| MH8M36CNJ-6 MH4M365CXJ-6 MH16M36BJ-6 |
8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 SIMM-72
4M X 36 MULTI DEVICE DRAM MODULE, 60 ns, DMA72
16M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
|
Qimonda AG
|
| K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90
4M x 32Bit x 4 Banks Mobile-SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M374F3200DJ1-C M374F3280DJ1-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M374F3200DJ1-C M374F3280DJ1-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
Samsung semiconductor
|
| HYB25D256160BF-7 HYB25D256160BEL-7F |
16M X 16 DDR DRAM, 0.75 ns, PBGA60
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INFINEON TECHNOLOGIES AG
|
