| PART |
Description |
Maker |
| KMM594000-10 KMM594000-8 KMM594000 |
4M x 9 CMOS DRAM Memory Module 4米9的CMOS DRAM记忆体模
4M x 9 CMOS DRAM SIMM Memory Module
|
Samsung Semiconductor Co., Ltd.
Samsung Electronics
|
| KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
| AEPDH4M9L-10S-NP AEPDS4M9L-10S-NP AEPDH4M9L-12N-NP |
4M X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30 SIMM-30
4M X 9 MULTI DEVICE DRAM MODULE, 120 ns, SMA30 SIMM-30
|
Linear Technology, Corp.
|
| KMM5321200C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
| KMM53216004BK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM53216004CK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM5364005BSW |
4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM5328004BSW |
8MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM53632004CK |
32MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
| KMM53216004BK KMM53216004BKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM53232000BK KMM53232000BKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM53616004BKG KMM53616004BK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
