| PART |
Description |
Maker |
| PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
| BCX79-IX BCX79-VII BCX79-VIII BCX79-X Q62702-C718 |
From old datasheet system
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
RES,SMC,681,0HM,1/4W/1%,1 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 自动对焦进步党硅晶体管（高电流增益低集电极发射极饱和电压
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| DC337-16-25-40 BC327-16 BC328-16 ON0144 BC328-25 |
Amplifier Transistors(PNP Silicon)
From old datasheet system
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
CASE 29-04, STYLE 17 TO-2 (TO-26AA)
|
ON Semiconductor
Siemens Semiconductor Group
|
| IDT5993A-5QI IDT5993A-5Q 5993A_DATASHEET IDT5993A- |
From old datasheet system
IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:890W; Collector Emitter Voltage, Vceo:250V; Package/Case:Module; Transistor Polarity:N Channel RoHS Compliant: Yes
IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:1500W; Collector Current:400A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No
IGBT Module; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:150W; Collector Current:30A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No
IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:960W; Collector Emitter Voltage, Vceo:600V; Package/Case:Module; Transistor Polarity:N Channel RoHS Compliant: Yes
PROGRAMMABLE SKEW PLL CLOCK DRIVER TURBOCLOCK PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO28
Scan Test Devices With 18-Bit Universal Bus Transceiver 64-LQFP -40 to 85 可编程相偏PLL时钟驱动器TURBOCLOCK
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| 2SC2780 |
High Collector-emitter voltage. Complements to PNP type 2SA1173
|
TY Semiconductor Co., Ltd
|
| FMBT1015 |
PNP Epitaxial Planar Transistor Collector - Emitter Voltage VCEO
|
First Components International
|
| SMBT2907A07 |
PNP Silicon Switching Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| BC847PN Q62702-C2374 BC847PNQ62702C2374 Q62702-C15 |
PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
TRANSISTOR SOT363
NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| C2611 |
Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
|
TY Semiconductor Co., Ltd
|
| 2SC3120 |
Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V
|
TY Semiconductor Co., Ltd
|
| BF421 BF423 Q62702-F496 Q62702-F532 |
PNP Silicon Transistors With High Reverse Voltage
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
