| PART |
Description |
Maker |
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| BFN20 Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BFN37 BFN39 Q62702-F1305 Q62702-F1304 |
From old datasheet system
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 1PS76SB62 |
Ultra high swiching speed Very low capacitance High breakdown voltage
|
TY Semiconductor Co., L...
|
| 2SC5032 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC3975 |
SILICON NPN TRIPLE DIFFUSION PLANAR TYPE(FOR HIGH BREAKDOWN VOLTAGE HIGH-SPEED SWITCHING)
|
Panasonic Semiconductor
|
| 2SC4420 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC3978 2SC3978A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic Semiconductor
|
| 2SC3743 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
