PART |
Description |
Maker |
K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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P4C163 P4C163-25CC P4C163-25CCLF P4C163-25CM P4C16 |
ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS 8K X 9 STANDARD SRAM, 35 ns, CQCC28 ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS 8K X 9 STANDARD SRAM, 45 ns, CDIP28 ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS 8K X 9 STANDARD SRAM, 35 ns, CDIP28 ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS 8K X 9 STANDARD SRAM, 25 ns, CDIP28 ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS 8K X 9 STANDARD SRAM, 25 ns, PDSO28 ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS 8K X 9 STANDARD SRAM, 45 ns, CDFP28
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Pyramid Semiconductor, Corp. Pyramid Semiconductor Corporation
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P93U422-35FMB P93U422-35PMB P93U422-35SMB |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, CDFP24 HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor, Corp. Microchip Technology, Inc.
|
KM681001B KM681001B-15 KM681001B-20 |
From old datasheet system 128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. 128K x 8 Bit High-Speed CMOS Static RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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IS61LV5128 IS61LV5128-10T IS61LV5128-12TI IS61LV51 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM 512K x 8 HIGH-SPEED CMOS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
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KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns 32Kx8 bit high speed static RAM (5V operating), 15ns 32Kx8 bit high speed static RAM (5V operating), 12ns 32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作(,进化引脚了。在商业温度范围工作
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Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
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KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
W24L011AQ-10 W24L011AQ-12 W24L011AQ-15 W24L011AT-1 |
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32 TRANS PNP W/RES 60HFE NEW S TYPE 128K X 8 STANDARD SRAM, 15 ns, PDSO32 Circular Connector; No. of Contacts:4; Series:MS27474; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-4 RoHS Compliant: No JT 55C 55#22M SKT PLUG HIGH SPEED SRAM
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Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
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K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静态RAM.0V操作) 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静RAM.0V操作)
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IS61LV6416 IS61LV6416-10 IS61LV6416-10B IS61LV6416 |
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY 64K的16高速CMOS静态RAM.3 V电源 ASYNCHRONOUS STATIC RAM
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ETC ICSI[Integrated Circuit Solution Inc]
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