PART |
Description |
Maker |
KM44S32030 |
8M x 4Bit x 4 Banks Synchronous DRAM(8M x 4浣?x 4缁??姝ュ???AM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S280432D-TC_L1L K4S280432D-TC_L1H K4S280432D-TC_ |
128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
Samsung semiconductor
|
K4S280432A K4S280432A-TC_L10 K4S280432A-TC_L1H K4S |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
W971GG8KB-25-TR |
16M 8 BANKS 8 BIT DDR2 SDRAM
|
Winbond
|
W9751G8JB |
16M X 4 BANKS X 8 BIT DDR2 SDRAM
|
Winbond
|
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S280432A-TC_L75 K4S280432A-TC_L80 K4S280432A-TC/ |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
W632GG6KB-15 W632GG6KB-11 |
16M X 8 BANKS X 16 BIT DDR3 SDRAM 16M X 8 BANKS X 16 BIT DDR3 SDRAM
|
Winbond
|
W632GU6KB W632GU6KB-12 W632GU6KB15I |
16M X 8 BANKS X 16 BIT DDR3L SDRAM 16M X 8 BANKS X 16 BIT DDR3L SDRAM
|
Winbond
|
K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323L |
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd. Omron Electronics, LLC SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
V54C365404VD |
HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 16M X 4 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 4
|
MOSEL[Mosel Vitelic, Corp]
|