| PART |
Description |
Maker |
| 3SK147 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
| SGM2016AM SGM2016AP SGM2016AM/AP |
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
|
| SGM2014AN |
GaAs N-channel Dual Gate MES FET
From old datasheet system
|
Sony
|
| 3SK165 3SK165A 3SK165A-0 3SK165A-1 |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET
|
Sony Corporation
|
| 3SK320 |
RF Dual Gate FETs
N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
|
Toshiba Semiconductor
|
| 3SK283 |
N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| NES2527B-30 |
30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE713 NE71300-L NE71300-N NECCORP.-NE713 |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC Corp.
|
