PART |
Description |
Maker |
MMDF6N03HD MMDF6N03HD_D ON2199 ON2198 |
DUAL TMOS POWER MOSFET 30 VOLTS Medium Power Surface Mount Products From old datasheet system
|
Motorola, Inc ON Semi
|
MTDF1P02HD |
DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM
|
Motorola, Inc.
|
MMDF3N04HD ON2182 |
DUAL TMOS POWER MOSFET 3.4 AMPERES 40 VOLTS 3400 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
MMDF2P02E ON2168 |
DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS 2 A, 20 V, 0.4 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
MMDF2N02E MMDF2N02E_D ON2160 |
From old datasheet system Medium Power Surface Mount Products DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS
|
MOTOROLA[Motorola, Inc] ON Semi
|
MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
|
MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10 |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA N-hannel Enhancement-ode Logic Level SOT23 From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
MMSF7N03Z MMSF7N03Z_D ON2275 MMSF7N03ZR2 |
7.5 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
MGSF3454VT1 MGSF3454VT1_D ON1906 MGSF3454VT1-D ON1 |
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc] MOTOROLA INC
|
ISL55110IRZ-T ISL55110-11 |
Dual, High Speed MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 16-QFN T&R 3.5 A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16
|
Intersil, Corp. Intersil Corporation
|
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor Motorola, Inc
|