| PART |
Description |
Maker |
| APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10045B2LL APT10045LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| APT10090BFLL APT10090SFLL |
POWER MOS 7 1000V 12A 0.900 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| APT10078BLL APT10078SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 1000V 14A 0.780 Ohm
|
Advanced Power Technology, Ltd.
Advanced Power Technology Ltd.
|
| SU19 SU110 SU17 SU18 |
POWER RECTIFIERS(1.0A,500-1000V)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| MU210 MU29 MU27 MU28 |
POWER RECTIFIERS(2.0A,500-1000V)
|
MOSPEC[Mospec Semiconductor]
|
| RJL6015DPK-15 |
600V - 19A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| APT1004R2BN APT1004RBN |
Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 1000V 4.4A 4.00 Ohm / 1000V 4.0A 4.20 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10030L2VR |
POWER MOS V 1000V 33A 0.300 Ohm
|
Advanced Power Technology
|
| APT10030L2VFR |
POWER MOS V 1000V 33A 0.300 Ohm
|
Advanced Power Technology
|
