| PART |
Description |
Maker |
| HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0（VDD）在3.0（提供VDDQ）V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| IC61S25636T-133TQI IC61S25636T-200TQ IC61S25636T-2 |
8Mb SyncBurst Pipelined SRAM
|
Integrated Circuit Solu...
|
| MT58L128L32F1 MT58L128V32F1 MT58L128V36F1 MT58L256 |
4MB: 256K X 18, 128K X 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| MT58L512L18F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology, Inc.
|
| MT58L128L32D1 |
128K x 32锛?.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb锛?.3V杈??/杈??锛??姘寸嚎寮????惊???娑???╋??????????瀛???ī
|
Micron Technology, Inc.
|
| IS61NVP102436A IS61NVP102436A-166B3 IS61NVP102436A |
1Mb x 36 and 2Mb x 18 STATE BUS SRAM
1M X 36 STANDARD SRAM, PBGA165 PLASTIC, BGA-165
1M X 36 STANDARD SRAM, PDSO100 TQFP-100
2M X 18 STANDARD SRAM, PBGA165
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| GS820E32AGT-133 |
64K x 32 2Mb Synchronous Burst SRAM 64K X 32 CACHE SRAM, 10 ns, PQFP100
|
GSI Technology, Inc.
|
| MT58L64L36F MT58L128V18F MT58L64V32F MT58L64V36F |
(MT58LxxxLxxF) 2Mb SRAM
|
Micron Semiconductor
|
| GS72108ATP78I GS72108AGP-10 GS72108AGP-10I GS72108 |
256K x 8 2Mb Asynchronous SRAM
|
ETC[ETC]
List of Unclassifed Manufacturers
|
| CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
| M48T254V M48T254V-10ZA1 |
3.3V, 16 Mbit (2Mb X 8 Bit) TIMEKEEPER SRAM with Phantom Clock
|
ST Microelectronics
|
| N02L163WN1AT2-55I N02L163WN1A N02L163WN1AB N02L163 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM
|
etc
NANOAMP[NanoAmp Solutions, Inc.]
Electronic Theatre Controls, Inc.
|
