PART |
Description |
Maker |
CEB94008 |
COM Express Type 10 Development Baseboard
|
Axiomtek Co., Ltd.
|
IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)) N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)4A条的Rds(on):0.070Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00V的,身份证(续)4A条的Rds(on.070Ω))
|
SEMELAB LTD Electronic Theatre Controls, Inc. TE Connectivity, Ltd. Semelab(Magnatec) SEME-LAB[Seme LAB]
|
SYS-4U4000-4S03-15 |
4U LGA 2011 Xeon? E5 Server with 6 x DDR3, 5 x PCIe x16 slot (Gen 3.0), IPMI
|
Advantech Co., Ltd.
|
IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)7.4A,的Rds(on):0.100Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)7.4A时,RDS(对):0.100Ω))
|
Electronic Theatre Controls, Inc. SEME-LAB Seme LAB
|
19003-0048 19003-0057 19003-0053 19003-0056 19003- |
.250 X.032 FML FIQD EXP CONT.(BB-2206XC) 2 mm2, PUSH-ON TERMINAL .187X.032 FEMALE AQUA FIQD CONT BB-2208C 2 mm2, PUSH-ON TERMINAL .187X.020 FEMALE FIQD EXPANDED (BB-2207X 2 mm2, PUSH-ON TERMINAL .187 X .032 FEMALE FIQD (BB-2208) 2 mm2, PUSH-ON TERMINAL .250 X.032 FML FIQD EXP TAPED(BB-2206XT) 2 mm2, PUSH-ON TERMINAL 190030058 2 mm2, PUSH-ON TERMINAL .205 X .020 BLUE FIQD CONT BB-2215C 2 mm2, PUSH-ON TERMINAL .250 X.032 FML FIQD EXP TAPED(AA-2201XT) 0.8 mm2, PUSH-ON TERMINAL 190030060 2 mm2, PUSH-ON TERMINAL .187 X .020 FEMALE FIQD CONT. (AA-2202C) 0.8 mm2, PUSH-ON TERMINAL .250 X .032 FEMALE FIQD CON 2 mm2, PUSH-ON TERMINAL
|
Molex, Inc. TE Connectivity, Ltd. MOLEX INC
|
PCA-6194G2-00A1E PCA-6194VG-00A1E |
LGA775 Core?/a> 2 Duo/Pentium? D/Pentium? 4/Celeron? D Processor Card with IPMI/VGA/Dual GbE LAN (FSB 1066/800 MHz) LGA775 Core 2 Duo/Pentium? D/Pentium? 4/Celeron? D Processor Card with IPMI/VGA/Dual GbE LAN (FSB 1066/800 MHz)
|
Advantech Co., Ltd.
|
IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
SML80A12 SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
0541043096 |
0.5 FPC CONN ASSY ZIF SMT RA(BTM CONT) E/O -LEAD FREE-
|
Molex Electronics Ltd.
|