PART |
Description |
Maker |
25N06G-TA3-T 25N06G-TN3-R 25N06G-TN3-T 25N06 |
25A, 60V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
RFP25N06 RF1S25N06 RF1S25N06SM |
25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
RJK0658DPA-00-J5A RJK0658DPA13 |
60V, 25A, 11.1m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
MJ15002 MJ15001 MJ15001-D |
Power 15A 140V Discrete PNP Power 15A 140V Discrete NPN Complementary Silicon Power Transistors
|
ON Semiconductor
|
OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 8A条一(c)|1
|
Vicor, Corp. Marktech Optoelectronics
|
2N4919G |
Bipolar Power C77 PNP 3A 60V; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA
|
ON Semiconductor
|
HFA25PB60 |
600V 25A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
|
International Rectifier
|
S25D50 S25D60 S25D30 S25D40 |
SCHOTTKY BARRIER RECTIFIERS(25A/30-60V) SCHOTTKY BARRIER RECTIFIERS(25A30-60V) SCHOTTKY BARRIER RECTIFIERS(25A,30-60V)
|
MOSPEC[Mospec Semiconductor]
|
DF25SC6M |
Schottky Rectifiers (SBD) (60V 25A)
|
Shindengen Electric Mfg... SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
FDB050AN06A0 FDP050AN06A0 FDP050AN06A0NL |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263AB Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
|
2SB834 2SB834O 2SB834Y |
POWER TRANSISTORS(3.0A,60V,30W) TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有
|
MOSPEC[Mospec Semiconductor] MOSPEC SEMICONDUCTOR CORP. Mospec Semiconductor, Corp.
|
CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|